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| SPW32N50C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance VDS @ Tjmax RDS(on) ID 560 0.11 32 P-TO247 V A Type SPW32N50C3 Package P-TO247 Ordering Code Q67040-S4613 Marking 32N50C3 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 C TC = 100 C A 32 20 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 96 1100 1 20 20 30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, T C = 25C A V W C VGS Ptot T j , T stg 284 -55... +150 Operating and storage temperature Rev. 2.0 Page 1 2004-03-16 SPW32N50C3 Maximum Ratings Parameter Drain Source voltage slope V DS = 400 V, ID = 32 A, Tj = 125 C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A breakdown voltage Gate threshold voltage Zero gate voltage drain current 500 2.1 Values typ. 600 3 0.5 0.09 0.27 0.8 max. 3.9 A 25 250 100 0.11 nA Symbol min. RthJC RthJA - Values typ. max. 0.44 62 260 Unit K/W C Tsold Unit V VGS(th) I DSS ID=1800, VGS=VDS V DS=500V, VGS=0V, Tj=25C, Tj=150C Gate-source leakage current I GSS V GS=20V, VDS=0V V GS=10V, ID=20A, Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open Drain Rev. 2.0 Page 2 2004-03-16 SPW32N50C3 Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol g fs Ciss Coss Crss Conditions min. V DS2*I D*RDS(on)max, ID=20A Values typ. 30 4200 1700 90 181 350 20 30 100 10 max. - Unit S pF V GS=0V, V DS=25V, f=1MHz Effective output capacitance, 2) Co(er) energy related Effective output capacitance, 3) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time V GS=0V, V DS=0V to 400V pF td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=32A, RG=2.7 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg VDD=380V, ID=32A - 15 90 170 5 - nC VDD=380V, ID=32A, VGS=0 to 10V V(plateau) VDD=380V, ID=32A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 3C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Rev. 2.0 Page 3 2004-03-16 SPW32N50C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt VGS=0V, IF=IS VR=380V, IF=IS , diF/dt=100A/s Symbol IS ISM Conditions min. TC=25C Values typ. 1 500 15 60 1000 max. 32 96 1.2 - Unit A V ns C A A/s Typical Transient Thermal Characteristics Symbol Thermal resistance R th1 R th2 R th3 R th4 R th5 R th6 0.004367 0.008742 0.017 0.081 0.103 0.049 K/W Value typ. Unit Symbol Value typ. Unit Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.0006644 0.002479 0.00336 0.009048 0.017 0.114 Ws/K Tj P tot (t) R th1 R th,n T case E xternal H eatsink C th1 C th2 C th,n T am b Rev. 2.0 Page 4 2004-03-16 SPW32N50C3 1 Power dissipation Ptot = f (TC) 320 SPW32N50C3 2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C 10 2 W A 240 10 1 Ptot 200 ID 10 0 160 120 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 80 40 10 -2 0 10 0 0 20 40 60 80 100 120 C 160 10 1 10 2 TC 10 V VDS 3 3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 0 4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 140 Vgs = 20V K/W A 10 -1 ZthJC 100 Vgs = 7V Vgs = 6V ID 80 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 60 Vgs = 5.5V 40 Vgs = 5V 20 Vgs = 4.5V 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 V VDS 25 Rev. 2.0 Page 5 2004-03-16 SPW32N50C3 5 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 80 Vgs = 20V 6 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, V GS 2 1.6 Vgs = 4V Vgs = 5.5V Vgs = 4.5VVgs = 5V A Vgs = 6V Vgs = 5.5V RDS(on) Vgs = 5V Vgs = 4.5V Vgs = 4V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 Vgs = 20 ID 40 20 0 0 5 10 15 V VDS 25 10 20 30 40 50 60 ID ID 80 7 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 20 A, VGS = 10 V 0.65 SPW32N50C3 8 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s 160 A 0.55 0.5 RDS(on) 120 Tj = 25C 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 -60 -20 20 60 100 C ID 100 Tj =150C 80 60 98% typ 40 20 180 0 0 1 2 3 4 5 6 7 8 Tj V 10 VGS Rev. 2.0 Page 6 2004-03-16 SPW32N50C3 9 Typ. gate charge VGS = f (QGate) 10 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPW32N50C3 parameter: ID = 32 A pulsed 16 V SPW32N50C3 A 12 VGS 0.8 VDS max 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 200 nC 10 -1 0 10 0.2 VDS max 10 1 4 2 0 0 40 80 120 160 260 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate VSD 11 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 20 12 Avalanche energy EAS = f (Tj) par.: ID = 10 A, VDD = 50 V 1.2 mJ A EAS 4 IAR 0.8 Tj(START)=25C 10 0.6 0.4 5 Tj(START)=125C 0.2 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 0 20 40 60 80 100 120 160 C Tj Rev. 2.0 Page 7 2004-03-16 SPW32N50C3 13 Drain-source breakdown voltage V(BR)DSS = f (Tj) 600 SPW32N50C3 14 Avalanche power losses PAR = f (f ) parameter: E AR=1mJ 1000 V W V(BR)DSS 570 560 550 540 530 520 510 500 490 480 470 460 450 -60 -20 20 60 100 200 400 PAR 600 C 180 04 10 10 5 Hz f 10 6 Tj 15 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 16 Typ. Coss stored energy Eoss=f(VDS) 22 pF 10 4 Ciss J 18 16 Eoss Coss Crss C 10 3 14 12 10 8 6 4 2 10 2 10 1 10 0 0 100 200 300 V VDS 500 0 0 100 200 300 V 500 VDS Rev. 2.0 Page 8 2004-03-16 SPW32N50C3 Definition of diodes switching characteristics Rev. 2.0 Page 9 2004-03-16 SPW32N50C3 P-TO-247-3-1 15.9 6.35 o3.61 5.03 2.03 4.37 20.9 9.91 6.17 D 7 D 1.75 1.14 0.243 1.2 2 2.92 5.46 16 0.762 MAX. 2.4 +0.05 General tolerance unless otherwise specified: Leadframe parts: 0.05 Package parts: 0.12 Rev. 2.0 41.22 2.97 x 0.127 5 5.94 20 Page 10 2004-03-16 SPW32N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 Page 11 2004-03-16 |
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